发明名称 |
Image Sensor with Deep Trench Isolation Structure |
摘要 |
Provided is a back side illuminated image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the front side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a deep trench isolation feature that is disposed adjacent to the radiation-detection device. The image sensor device further includes a doped layer that at least partially surrounds the deep trench isolation feature in a conformal manner. |
申请公布号 |
US2012025199(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US20100844642 |
申请日期 |
2010.07.27 |
申请人 |
CHEN SZU-YING;CHUANG CHUN-CHIEH;LIU JEN-CHENG;YAUNG DUN-NIAN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD |
发明人 |
CHEN SZU-YING;CHUANG CHUN-CHIEH;LIU JEN-CHENG;YAUNG DUN-NIAN |
分类号 |
H01L31/02;H01L31/0264;H01L31/0376;H01L31/18 |
主分类号 |
H01L31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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