发明名称 |
Piezoelectric thin film element |
摘要 |
A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer, and a top electrode on a substrate. The piezoelectric layer includes, as a main phase, a perovskite-type oxide. The bottom electrode has a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms. The bottom electrode has a (111) preferential orientation in a direction perpendicular to the substrate. |
申请公布号 |
US2012025668(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113137580 |
申请日期 |
2011.08.26 |
申请人 |
SUENAGA KAZUFUMI;SHIBATA KENJI;OKA FUMIHITO;SATO HIDEKI;HITACHI CABLE, LTD. |
发明人 |
SUENAGA KAZUFUMI;SHIBATA KENJI;OKA FUMIHITO;SATO HIDEKI |
分类号 |
H01L41/047;H01L41/09;H01L41/113 |
主分类号 |
H01L41/047 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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