发明名称 Piezoelectric thin film element
摘要 A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer, and a top electrode on a substrate. The piezoelectric layer includes, as a main phase, a perovskite-type oxide. The bottom electrode has a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms. The bottom electrode has a (111) preferential orientation in a direction perpendicular to the substrate.
申请公布号 US2012025668(A1) 申请公布日期 2012.02.02
申请号 US201113137580 申请日期 2011.08.26
申请人 SUENAGA KAZUFUMI;SHIBATA KENJI;OKA FUMIHITO;SATO HIDEKI;HITACHI CABLE, LTD. 发明人 SUENAGA KAZUFUMI;SHIBATA KENJI;OKA FUMIHITO;SATO HIDEKI
分类号 H01L41/047;H01L41/09;H01L41/113 主分类号 H01L41/047
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