| 摘要 |
A memory device includes: a first cell block which includes multiple word lines and first to K^th redundancy word lines, wherein K is a natural number; a second cell block which includes multiple word lines and (K+1)^th to N^th redundancy word lines, wherein N is a natural number greater than K; and a control unit which controls the first to N^th redundancy word lines to replace the word lines of the first or second cell block, refreshes the word lines of the first and second cell blocks together in a first section, and refreshes the first to N^th redundancy word lines in order in a second section. Therefore, the memory device can increase utilization efficiency of the redundancy word lines. |
