发明名称 SUBSTRATE-EMBEDDED CAPACITOR, CAPACITOR-INTEGRATED SUBSTRATE PROVIDED WITH SAME, AND METHOD FOR PRODUCING SUBSTRATE-EMBEDDED CAPACITOR
摘要 <p>The disclosed substrate-embedded capacitor is characterized by being provided with: a first electrode that extends in a predetermined direction; a dielectric layer provided to a region that is a portion of the aforementioned first electrode; a second electrode that is provided to the aforementioned dielectric layer and that faces the aforementioned first electrode with the dielectric layer therebetween; and an electrode layer that is provided to the aforementioned first electrode at the surroundings of the aforementioned dielectric layer and that is connected to the aforementioned first electrode. The substrate-embedded capacitor is further characterized by a portion of the aforementioned electrode layer being provided to the end section of the aforementioned dielectric layer, leaving a gap from the aforementioned second electrode in the aforementioned predetermined direction and facing the aforementioned first electrode with the aforementioned dielectric layer therebetween.</p>
申请公布号 WO2012014647(A1) 申请公布日期 2012.02.02
申请号 WO2011JP65544 申请日期 2011.07.07
申请人 SANYO ELECTRIC CO., LTD.;NOGUCHI HITOSHI;EZAKI KENICHI 发明人 NOGUCHI HITOSHI;EZAKI KENICHI
分类号 H01G4/12;H01G4/18;H01G4/33;H05K1/16;H05K3/46 主分类号 H01G4/12
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