发明名称 |
Receiver, semiconductor memory device and memory module including the same |
摘要 |
PURPOSE: A receiving device, a semiconductor memory device including the same, and a memory module are provided to improve a signal integrity by controlling a voltage level of a data signal. CONSTITUTION: A first buffer unit(1100) changes resistance of a variable resistor unit. The first buffer unit controls a voltage level of a data signal and a reference voltage signal. The first buffer unit generates an inner data signal and an inner reference voltage signal. A second buffer unit(1200) compares the inner data signal with the inner reference voltage signal and amplifies the voltage level of the inner data signal. The second buffer unit generates an input data signal.
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申请公布号 |
KR20120009556(A) |
申请公布日期 |
2012.02.02 |
申请号 |
KR20100069409 |
申请日期 |
2010.07.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, SUNG JOO;LEE, JEA EUN;LEE, JUNG JOON;KIM, YANG KI;KIM, KYOUNG SUN |
分类号 |
G11C11/4074;G11C11/4091;G11C11/4093 |
主分类号 |
G11C11/4074 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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