| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for recovering tantalum with high efficiency from a scrapped electronic board with a tantalum capacitor mounted thereon or from a scrapped tantalum capacitor. <P>SOLUTION: The method for recovering the tantalum, includes: a first heat treatment step of heat-treating the board with the tantalum capacitor mounted thereon or the tantalum capacitor at the temperature of 400-500°C under oxidizing atmosphere and obtaining a first heat-treated material; a first sorting step of sorting the obtained first heat-treated material into silicon compound being the powdered first heat-treated material and the other components; a second heat treatment step of heat-treating the sorted other components at the temperature of ≥550°C and obtaining a second heat-treated material; and a second sorting step of sorting the obtained second heat-treated material into the tantalum component being the powdered second heat-treated material and noble metals. <P>COPYRIGHT: (C)2012,JPO&INPIT |
