MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device including an oxide semiconductor with improved electrical characteristics.

SOLUTION: A manufacturing method of a semiconductor device including an oxide semiconductor film, a gate electrode overlapping with the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film comprises: forming a first insulation film including gallium oxide on and in contact with the oxide semiconductor film; forming a second insulation film on and in contact with the first insulation film; forming a resist mask on the second insulation film; forming a contact hole by dry-etching the first insulation film and the second insulation film; removing the resist mask by ashing with oxygen plasma; and forming wiring that is electrically connected to one or more of the gate electrode, the source electrode or the drain electrode via the contact hole.

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