| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve efficiency in use of a first gas. <P>SOLUTION: A manufacturing method of a semiconductor device has steps of supplying a first gas into a processing chamber from a first nozzle communicating with the processing chamber while decreasing exhaust velocity in the processing chamber, supplying an inert gas into the first nozzle after stopping the supply of the first gas, and removing the first gas remaining in the processing chamber. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012023221(A) |
申请公布日期 |
2012.02.02 |
| 申请号 |
JP20100160265 |
申请日期 |
2010.07.15 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
ASAI MASAYUKI;OKAMIYA HIROKI;KUMON SATAO;NAKAISO NAOHARU;MIZUNO KANEKAZU |
| 分类号 |
H01L21/318;C23C16/455;H01L21/31 |
主分类号 |
H01L21/318 |
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代理人 |
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