发明名称 SEMICONDUCTOR DEVICES WITH 2DEG AND 2DHG
摘要 A semiconductor device comprises three semiconductor layers. The semiconductor layers are arranged to form a 2DHG and a 2DEG separated by a polarization layer. The device comprises a plurality of electrodes: first and second electrodes electrically connected to the 2DHG so that current can flow between them via the 2DHG and a third electrode electrically connected to the 2DEG so that when a positive voltage is applied to the third electrode, with respect to at least one of the other electrodes, the 2DEG and the 2DHG will be at least partially depleted.
申请公布号 WO2012013943(A1) 申请公布日期 2012.02.02
申请号 WO2011GB51065 申请日期 2011.06.07
申请人 THE UNIVERSITY OF SHEFFIELD;NAKAJIMA, AKIRA;MADATHIL, SANKARA NARAYANAN EKKANATH 发明人 NAKAJIMA, AKIRA;MADATHIL, SANKARA NARAYANAN EKKANATH
分类号 H01L29/872;H01L27/095;H01L29/10;H01L29/778 主分类号 H01L29/872
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