发明名称 |
SEMICONDUCTOR DEVICES WITH 2DEG AND 2DHG |
摘要 |
A semiconductor device comprises three semiconductor layers. The semiconductor layers are arranged to form a 2DHG and a 2DEG separated by a polarization layer. The device comprises a plurality of electrodes: first and second electrodes electrically connected to the 2DHG so that current can flow between them via the 2DHG and a third electrode electrically connected to the 2DEG so that when a positive voltage is applied to the third electrode, with respect to at least one of the other electrodes, the 2DEG and the 2DHG will be at least partially depleted. |
申请公布号 |
WO2012013943(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
WO2011GB51065 |
申请日期 |
2011.06.07 |
申请人 |
THE UNIVERSITY OF SHEFFIELD;NAKAJIMA, AKIRA;MADATHIL, SANKARA NARAYANAN EKKANATH |
发明人 |
NAKAJIMA, AKIRA;MADATHIL, SANKARA NARAYANAN EKKANATH |
分类号 |
H01L29/872;H01L27/095;H01L29/10;H01L29/778 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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