发明名称 |
ELECTRODE STUCTURE, SEMICONDUCTOR ELEMENT, AND METHODS OF MANUFACTURING THE SAME |
摘要 |
According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element. |
申请公布号 |
US2012028456(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113269153 |
申请日期 |
2011.10.07 |
申请人 |
KOUMOTO SHIGERU;SASAKI TATSUYA;SHIBA KAZUHIRO;SUMINO MASAYOSHI;RENESAS ELECTRONICS CORPORATION |
发明人 |
KOUMOTO SHIGERU;SASAKI TATSUYA;SHIBA KAZUHIRO;SUMINO MASAYOSHI |
分类号 |
H01L21/28;H01L33/32;H01L33/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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