Thin film transistor for display apparatus of electronic device e.g. TV, has contact layer arranged between organic semiconductor layer and source/drain electrode

摘要

The thin film transistor (1-1, 1-5) has a contact layer (19) that is arranged between the organic semiconductor layer and the source/drain electrode. The contact layer contains the acceptor property material or donor property material. The source electrode (21s)/drain electrode (21d) is laminated by the organic-semiconductor layer (17) through the contact layer. Independent claims are included for the following: (1) manufacturing method of thin film transistor; (2) display apparatus; and (3) electronic device.