| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress an increase of effective capacity between wiring lines. <P>SOLUTION: A semiconductor device 100 comprises: an insulating film 11 made from a six-membered cyclic siloxane; a wiring groove 12 formed in the insulating film 11; and a wiring line 10 composed of the wiring groove 12 embedded with a metal film (wiring metal) 15. In the semiconductor device 100, a modified layer 13 with a larger number of carbon or/and nitrogen atoms per unit volume than in the inside of the insulating film 11 is formed on the bottom surface of the wiring groove 12. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012023245(A) |
申请公布日期 |
2012.02.02 |
| 申请号 |
JP20100160825 |
申请日期 |
2010.07.15 |
| 申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
OSHIDA DAISUKE;KUME IPPEI;UEKI MAKOTO;IGUCHI MANABU;INOUE HISAYA;MARUYAMA TAKUYA;TAIJI TOSHIJI;KATSUYAMA YOICHI |
| 分类号 |
H01L23/522;H01L21/316;H01L21/768 |
主分类号 |
H01L23/522 |
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