| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress a decrease in a yield. <P>SOLUTION: An insulator 130.1 is formed on at least a part of a portion of a first semiconductor layer 110 above which a second semiconductor layer 120 is not formed by forming an opening 121.1. In the opening 121.1, a source electrode S10 is formed so as to cover the insulator 130.1. The source electrode S10 is formed so as to come into contact with an interface between the first semiconductor layer 110 and second semiconductor layer 120. <P>COPYRIGHT: (C)2012,JPO&INPIT |
