| 摘要 |
A method includes providing a semiconductor substrate formed of a first semiconductor material; and forming a plurality of insulation regions over at least a portion of the semiconductor substrate, with a plurality of trenches separating the plurality of insulation regions apart from each other. A first epitaxial growth is performed to epitaxially grow a plurality of semiconductor regions in the plurality of trenches, wherein (111) facets are formed and exposed during the step of the first epitaxial growth. When the (111) facets of neighboring ones of the plurality of semiconductor regions touch each other, a second epitaxial growth is performed to continue grow the plurality of semiconductor regions to form (100) planes between the neighboring ones of the plurality of semiconductor regions. |
