发明名称 REFLECTIVE MASK BLANK, MANUFACTURING METHOD THEREOF, AND REFLECTIVE MASK
摘要 <p>[Problem] To resolve the problem that employing high-contrast photoresist that is typically used when producing a reflective mask causes accumulated energy and CD linearity to deteriorate owing to backscatter. [Solution] A reflective mask blank for producing a reflective mask comprises: a substrate; a multilayered reflecting film that is formed on the substrate and that reflects exposure light; and an absorbing body film, formed on the multilayered reflecting film, which absorbs exposure light. A photoresist film for electron beam etching is disposed on the absorbing body film, and the contrast ? of the photoresist film for electron beam etching is 30 or less.</p>
申请公布号 WO2012014495(A1) 申请公布日期 2012.02.02
申请号 WO2011JP04321 申请日期 2011.07.29
申请人 HOYA CORPORATION;HASHIMOTO, MASAHIRO;ONO, KAZUNORI;TSUKAGOSHI, KENTA;FUKUI, TOORU 发明人 HASHIMOTO, MASAHIRO;ONO, KAZUNORI;TSUKAGOSHI, KENTA;FUKUI, TOORU
分类号 H01L21/027 主分类号 H01L21/027
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