SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAID SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

The disclosed silicon carbide substrate (1) comprises silicon carbide, and the angle between the orthographic projections of the normal of one principal surface (1A) and the normal of the {03-38} plane, to a plane containing the <01-10> direction and the <0001> direction, is 0.5° or less. As a result, said silicon carbide substrate (1) exhibits both improved semiconductor-device channel mobility and property stability.