发明名称 SINTERED MATERIAL FOR ZNO-MGO-BASED SPUTTERING TARGET
摘要 <p>[Problem] A sintered material for a ZnO-MgO-based sputtering target, which comprises ZnO and MgO, and which is characterized in that Mg is contained in an amount of 3-50 mol% in terms of MgO, an MgO phase (containing an MgO-rich solid solution phase) has the largest crystal particle diameter of 10 µm or less, and the sintered material has a homogeneously dispersed structure. The purpose of the present invention is to provide a sintered material for a ZnO-MgO-based sputtering target, which rarely undergoes the formation of nodules or particles even when the sputtering is carried out for a long period, and which enables the production of a film of which the film composition has excellent in-plane uniformity.</p>
申请公布号 WO2012014688(A1) 申请公布日期 2012.02.02
申请号 WO2011JP66039 申请日期 2011.07.14
申请人 JX NIPPON MINING & METALS CORPORATION;TAKAMI HIDEO;SAKAMOTO MASARU;YAMAMOTO HIROYOSHI;TAMURA TOMOYA 发明人 TAKAMI HIDEO;SAKAMOTO MASARU;YAMAMOTO HIROYOSHI;TAMURA TOMOYA
分类号 C04B35/453;C23C14/34 主分类号 C04B35/453
代理机构 代理人
主权项
地址