GROOVED POLISHING PAD FOR CHEMICAL MECHANICAL PLANARIZATION

摘要

PROBLEM TO BE SOLVED: To provide a pad and a method for polishing a metal damascene structure of a semiconductor wafer.

SOLUTION: A pad has high pad rigidity, low elastic recovery, and high energy dissipation. The pad has a macro texture including grooves having a groove depth D of about 75 to about 2540 μm, a groove width W of about 125 to about 1270 μm, and a groove pitch P of about 500 to 3600 μm. A groove pattern gives a groove rigidity coefficient GSQ of about 0.03 to about 1.0 and a groove flow coefficient GFQ of about 0.03 to about 0.9.

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