SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor storage device and a manufacturing method of the same which improves reliability by inhibiting secondary electrons generated in a channel region of the semiconductor storage device using a diffusion layer for a bit line.

SOLUTION: The semiconductor storage device 100 comprises a plurality of bit line diffusion layers 108 formed above a p-type semiconductor substrate 101 in such a manner as to extend in parallel with each other, and a plurality of word line electrodes 110 formed above the semiconductor substrate 101 in such a manner as to extend in a direction respectively crossing the bit line diffusion layers 108 and in parallel with each other. A plurality of P-type third impurity layers 111A with a concentration lower than that of a surrounding region are formed in a region on the semiconductor substrate 101 below respective word line electrodes 110 each in a self-aligning manner.

COPYRIGHT: (C)2012,JPO&INPIT