| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide highly reliable GaN based high electron mobility transistors (HEMTs) with high mass productivity by enhancing heat endurance of a source electrode and a drain electrode, and removing instability factors imposed on ohmic properties in the manufacturing process. <P>SOLUTION: The GaN based HEMT comprises a substrate, a gallium nitride based semiconductor, and source and drain electrodes formed by laminating a high melting point metal, i.e. tantalum, having a melting point of 3000°C and a low melting point metal, i.e. aluminum, on the gallium nitride based semiconductor. The source and drain electrodes are formed by setting the ratio of lamination film thickness of tantalum and aluminum (aluminum film thickness/tantalum film thickness) to 10 or above, and annealing the laminate at a temperature of 510°C or more and less than 600°C after laminating. <P>COPYRIGHT: (C)2012,JPO&INPIT |
