| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a liquid crystal display device with high display quality by preventing irradiation of a semiconductor layer with light diffracted at an end of a light-blocking layer that causes variation in thin film transistor (TFT) characteristics. <P>SOLUTION: In order to completely block light 117 diffracted at an end of a third light-blocking layer 108, a semiconductor layer 103 is covered with a gate electrode 104 and second light-blocking portions 106. Thus, irradiation with diffracted light can be prevented, variation in TFT characteristics can be avoided, and an excellent display image can be obtained. <P>COPYRIGHT: (C)2012,JPO&INPIT |
