| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CVD apparatus which reduces a cleaning frequency of the inside of a chamber necessary for maintaining high quality deposition thereby improving an operation rate. <P>SOLUTION: A CVD apparatus 100 comprises a chamber 1, a material gas supply device 2 for supplying a material gas into the chamber 1 and a waste gas processing device 12 for exhausting a waste gas from the chamber 1. A heating stage 6 provided in the chamber 1 has a mechanism for holding a substrate 5 and a heater cover 10 is provided around the heating stage 6 for inhibiting the heating stage 6 from corrosion by the waste gas or adhesion of a reaction product in the waste gas. The heater cover 10 has a plurality of gas eject ports 16 for ejecting a seal gas to create a seal gas layer that is a layer of an inert gas not reacting with the material gas between a surface of the heater cover 10 and the waste gas within a range of 30 mm from a circumference of the substrate 5 and thereby reducing an amount of deposit on the heater cover 10. <P>COPYRIGHT: (C)2012,JPO&INPIT |
