发明名称 |
RF ISOLATION SWITCH CIRCUIT |
摘要 |
In a first aspect, an RF switch includes a main transistor and a gate-to-source shorting circuit. When the RF switch is turned off, the gate-to- source shorting circuit is turned on to short the source and gate of the main transistor together, thereby preventing a Vgs from developing that would cause the main transistor to leak. When the RF switch is turned on, the gate-to-source shorting circuit is turned off to decouple the source from the gate. The gate is supplied with a digital logic high voltage to turn on the main transistor. In a second aspect, an RF switch includes a main transistor that has a bulk terminal. When the RF switch is turned off, the bulk is connected to ground through a high resistance. When the RF switch is turned on, the source and bulk are shorted together thereby reducing the threshold voltage of the main transistor. |
申请公布号 |
WO2012015849(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
WO2011US45427 |
申请日期 |
2011.07.26 |
申请人 |
QUALCOMM INCORPORATED;YAN, HONGYAN;SANKARANARAYANAN, JANAKIRAM GANESH;ASURI, BHUSHAN SHANTI;KHATRI, HIMANSHU;PANIKKATH, VINOD V. |
发明人 |
YAN, HONGYAN;SANKARANARAYANAN, JANAKIRAM GANESH;ASURI, BHUSHAN SHANTI;KHATRI, HIMANSHU;PANIKKATH, VINOD V. |
分类号 |
H03K17/06;H01P1/22;H03H7/42;H03H11/24;H03H11/32;H03K17/16;H03K17/687;H04B1/04;H04B1/48 |
主分类号 |
H03K17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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