发明名称 RF ISOLATION SWITCH CIRCUIT
摘要 In a first aspect, an RF switch includes a main transistor and a gate-to-source shorting circuit. When the RF switch is turned off, the gate-to- source shorting circuit is turned on to short the source and gate of the main transistor together, thereby preventing a Vgs from developing that would cause the main transistor to leak. When the RF switch is turned on, the gate-to-source shorting circuit is turned off to decouple the source from the gate. The gate is supplied with a digital logic high voltage to turn on the main transistor. In a second aspect, an RF switch includes a main transistor that has a bulk terminal. When the RF switch is turned off, the bulk is connected to ground through a high resistance. When the RF switch is turned on, the source and bulk are shorted together thereby reducing the threshold voltage of the main transistor.
申请公布号 WO2012015849(A1) 申请公布日期 2012.02.02
申请号 WO2011US45427 申请日期 2011.07.26
申请人 QUALCOMM INCORPORATED;YAN, HONGYAN;SANKARANARAYANAN, JANAKIRAM GANESH;ASURI, BHUSHAN SHANTI;KHATRI, HIMANSHU;PANIKKATH, VINOD V. 发明人 YAN, HONGYAN;SANKARANARAYANAN, JANAKIRAM GANESH;ASURI, BHUSHAN SHANTI;KHATRI, HIMANSHU;PANIKKATH, VINOD V.
分类号 H03K17/06;H01P1/22;H03H7/42;H03H11/24;H03H11/32;H03K17/16;H03K17/687;H04B1/04;H04B1/48 主分类号 H03K17/06
代理机构 代理人
主权项
地址