发明名称 |
METHOD OF TAILORING CONFORMALITY OF Si-CONTAINING FILM |
摘要 |
A method of tailoring conformality of a film deposited on a patterned surface includes: (I) depositing a film by PEALD or pulsed PECVD on the patterned surface; (II) etching the film, wherein the etching is conducted in a pulse or pulses, wherein a ratio of an etching rate of the film on a top surface and that of the film on side walls of the patterns is controlled as a function of the etching pulse duration and the number of etching pulses to increase a conformality of the film; and (III) repeating (I) and (II) to satisfy a target film thickness. |
申请公布号 |
US2012028469(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US20100847848 |
申请日期 |
2010.07.30 |
申请人 |
ONIZAWA SHIGEYUKI;LEE WOO-JIN;FUKUDA HIDEAKI;NAMBA KUNITOSHI;ASM JAPAN K.K. |
发明人 |
ONIZAWA SHIGEYUKI;LEE WOO-JIN;FUKUDA HIDEAKI;NAMBA KUNITOSHI |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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