发明名称 |
METHOD FOR FABRICATING GROUP III-NITRIDE SEMICONDUCTOR |
摘要 |
A method of fabricating a group III-nitride semiconductor includes the following steps of forming a first patterned mask layer with a plurality of first openings deposited on an epitaxial substrate; epitaxially growing a group III-nitride semiconductor layer over the epitaxial substrate and covering at least part of the first patterned mask layer; etching the group III-nitride semiconductor layer to form a plurality of second openings, which are substantially at least partially aligned with the first openings; and epitaxially growing the group III-nitride semiconductor layer again. |
申请公布号 |
US2012028446(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113191798 |
申请日期 |
2011.07.27 |
申请人 |
CHENG YUH-JEN;LO MING-HUA;KUO HAO-CHUNG |
发明人 |
CHENG YUH-JEN;LO MING-HUA;KUO HAO-CHUNG |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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