发明名称 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL
摘要 A method for manufacturing a thin film transistor array panel includes forming a gate line; forming an insulating layer on the gate line; forming first and second silicon layers first and second metal layers; forming a photoresist pattern having first and second portions; forming first and second metal patterns by etching the first and second metal layers; processing the first metal pattern with SF6 or SF6/He; forming silicon and semiconductor patterns by etching the second and first silicon layers; removing the first portion of the photoresist pattern; forming an upper layer of a data wire by wet etching the second metal pattern; forming a lower layer of the data wire and an ohmic contact by etching the first metal and amorphous silicon patterns; forming a passivation layer including a contact hole on the upper layer; and forming a pixel electrode on the passivation layer.
申请公布号 US2012028421(A1) 申请公布日期 2012.02.02
申请号 US201113109686 申请日期 2011.05.17
申请人 YANG DONG-JU;JEONG YU-GWANG;SONG JEAN-HO;LEE KI-YEUP;CHOI SHIN-IL;KIM TAE-WOO;SAMSUNG ELECTRONICS CO., LTD. 发明人 YANG DONG-JU;JEONG YU-GWANG;SONG JEAN-HO;LEE KI-YEUP;CHOI SHIN-IL;KIM TAE-WOO
分类号 H01L21/336 主分类号 H01L21/336
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