发明名称 |
METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL |
摘要 |
A method for manufacturing a thin film transistor array panel includes forming a gate line; forming an insulating layer on the gate line; forming first and second silicon layers first and second metal layers; forming a photoresist pattern having first and second portions; forming first and second metal patterns by etching the first and second metal layers; processing the first metal pattern with SF6 or SF6/He; forming silicon and semiconductor patterns by etching the second and first silicon layers; removing the first portion of the photoresist pattern; forming an upper layer of a data wire by wet etching the second metal pattern; forming a lower layer of the data wire and an ohmic contact by etching the first metal and amorphous silicon patterns; forming a passivation layer including a contact hole on the upper layer; and forming a pixel electrode on the passivation layer. |
申请公布号 |
US2012028421(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113109686 |
申请日期 |
2011.05.17 |
申请人 |
YANG DONG-JU;JEONG YU-GWANG;SONG JEAN-HO;LEE KI-YEUP;CHOI SHIN-IL;KIM TAE-WOO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YANG DONG-JU;JEONG YU-GWANG;SONG JEAN-HO;LEE KI-YEUP;CHOI SHIN-IL;KIM TAE-WOO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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