Verfahren zum Ausbilden einer Metallelektrode einer Halbleitereinrichtung und Vorrichtung zum Ausbilden einer Metallelektrode

摘要

The method involves forming a bed electrode (12) on the main surface (11a) of a semiconductor substrate (11) so that the bed electrode is electrically connected with a semiconductor element. A protective film (13) is formed for covering the bed electrode and an opening (13a) is formed in the protective film so that a surface (12a) of the bed electrode is exposed in the opening. An independent claim is also included for a device for forming a metal electrode.