发明名称 |
Bi-layer hard mask for the patterning and etching of nanometer size MRAM devices |
摘要 |
A composite hard mask is disclosed that prevents build up of metal etch residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ shape integrity is substantially improved. The hard mask has a lower non-magnetic spacer, a middle conductive layer, and an upper sacrificial dielectric layer. The non-magnetic spacer serves as an etch stop during a pattern transfer with fluorocarbon plasma through the conductive layer. A photoresist pattern is transferred through the dielectric layer with a first fluorocarbon etch. Then the photoresist is removed and a second fluorocarbon etch transfers the pattern through the conductive layer. The dielectric layer protects the top surface of the conductive layer during the second fluorocarbon etch and during a substantial portion of a third RIE step with a gas comprised of C, H, and O that transfers the pattern through the underlying MTJ layers. |
申请公布号 |
US2012028373(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US20100804840 |
申请日期 |
2010.07.30 |
申请人 |
BELEN RODOLFO;XIAO RONGFU;ZHONG TOM;KULA WITOLD;TORNG CHYU-JIUH;MAGIC TECHNOLOGIES, INC. |
发明人 |
BELEN RODOLFO;XIAO RONGFU;ZHONG TOM;KULA WITOLD;TORNG CHYU-JIUH |
分类号 |
H01L43/12;B32B5/00;B32B7/02;B32B15/04 |
主分类号 |
H01L43/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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