| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for forming a substrate of an oxide superconducting layer, which allows the effective suppression of element diffusion without the need for forming a thick diffusion prevention layer, and to provide a technique for forming a buffer layer having a diffusion prevention function without damaging the surface of base material in flatness because the element diffusion can be suppressed effectively without the need for forming a thick diffusion prevention layer. <P>SOLUTION: The base material A for an oxide superconducting conductor has: a metal base material 20 containing chromium; a chromium oxide layer 25 formed on the side of the inside surface of the metal base material 20 containing chromium and having a thickness of 5-1000 nm; and an intermediate layer 23 formed by an ion beam assist film formation method, in this order. <P>COPYRIGHT: (C)2012,JPO&INPIT |
