| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that can control a high frequency wave propagating in a waveguide formed in an electrode. <P>SOLUTION: A plasma processing apparatus 10 includes: a vacuum container 100 having therein a mounting table 115 for mounting a substrate G, and a plasma space in which a plasma is generated above the mounting table; a plurality of electrode pairs 200 separated into two electrode parts of a first electrode part 200a and a second electrode part 200b, and arranged in the vacuum container spaced apart; and a plurality of coaxial tubes 225 provided across the two electrode parts, and each of which supplies a high frequency wave for exciting the plasma within the vacuum container. Internal conductors of the plurality of coaxial tubes are connected one of the two electrode parts, and external conductors of those are connected to the other electrode parts. After the high frequency wave supplied through each of the plurality of coaxial tubes propagates in a waveguide 205 formed between the two electrode parts, the high frequency wave is radiated from a plasma exposed surface of a dielectric plate 210 provided in the waveguide into the vacuum container to excite the plasma. <P>COPYRIGHT: (C)2012,JPO&INPIT |
