发明名称 |
LOW SCHOTTKY BARRIER SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME |
摘要 |
A low Schottky barrier semiconductor structure is provided, comprising: a substrate; a SiGe layer with low Ge content formed on the substrate; a channel layer with high Ge content formed on the SiGe layer; a gate stack formed on the substrate and a side wall of one or more layers formed on both sides of the gate stack; a metal source and a metal drain formed in the channel layer and on the both sides of the gate stack respectively; and an insulation layer formed between the substrate and the metal source and between the substrate and the metal drain respectively.
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申请公布号 |
US2012025279(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113132760 |
申请日期 |
2011.05.10 |
申请人 |
WANG JING;WANG WEI;GUO LEI;XU JUN;TSINGHUA UNIVERSITY |
发明人 |
WANG JING;WANG WEI;GUO LEI;XU JUN |
分类号 |
H01L29/812;H01L21/338 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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