发明名称 |
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device structure and a method for fabricating the same. A method for fabricating semiconductor device structure includes forming gate lines on a semiconductor substrate; forming gate sidewall spacers surrounding the gate lines; forming respective source/drain regions in the semiconductor substrate and on either side of the respective gate lines; forming conductive sidewall spacers surrounding the gate sidewall spacers; and cutting off the gate lines, the gate sidewall spacers and the conductive sidewall spacers at predetermined positions, in which the cut gate lines are electrically isolated gates, and the cut conductive sidewall spacers are electrically isolated lower contacts. The method is applicable to the manufacture of contacts in integrated circuits.
|
申请公布号 |
US2012025317(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201013003969 |
申请日期 |
2010.09.27 |
申请人 |
ZHONG HUICAI;LIANG QINGQING;YIN HAIZHOU;INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
ZHONG HUICAI;LIANG QINGQING;YIN HAIZHOU |
分类号 |
H01L29/772;H01L21/336 |
主分类号 |
H01L29/772 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|