发明名称 |
MOS Type Semiconductor Device and Method of Manufacturing Same |
摘要 |
An object of the present invention is to provide a MOS type semiconductor device allowing production at a low cost without lowering a breakdown voltage and avoiding increase of an ON resistance. A MOS type semiconductor device of the invention comprises: a p base region having a bottom part in a configuration with a finite radius of curvature and selectively disposed on a front surface region of a n− drift layer; an n type first region selectively disposed on a front surface region of the p base region; a gate electrode disposed on a part of the surface of the p base region between a surface of the n type first region and a front surface of the n− drift layer interposing a gate insulation film between the part of the surface of the p base region and the gate electrode; and a metal electrode in electrically conductive contact with the front surface of the n type first region and the central part of the surface of the p base region; wherein a pn junction surface between the base region and the drift layer has centers of curvature both at the outside and inside of the base region. |
申请公布号 |
US2012025262(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113195516 |
申请日期 |
2011.08.01 |
申请人 |
NIIMURA YASUSHI;FUJI ELECTRIC CO., LTD. |
发明人 |
NIIMURA YASUSHI |
分类号 |
H01L29/78;H01L21/266;H01L29/739 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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