发明名称 |
POLISHING METHOD, POLISHING APPARATUS AND GAN WAFER |
摘要 |
<p>A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate (16) into contact with a polishing tool (10) in the presence of a processing solution (14) comprising a neutral pH buffer solution containing Ga ions; irradiating a surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide (16a) on the surface of the substrate; and simultaneously moving the substrate and the polishing tool relative to each other to polish and remove the Ga oxide formed on the surface of the substrate.</p> |
申请公布号 |
EP2412009(A1) |
申请公布日期 |
2012.02.01 |
申请号 |
EP20100756259 |
申请日期 |
2010.03.19 |
申请人 |
OSAKA UNIVERSITY;EBARA CORPORATION |
发明人 |
SANO, YASUHISA;YAMAUCHI, KAZUTO;MURATA, JUNJI;SADAKUNI, SHUN;YAGI, KEITA |
分类号 |
H01L21/304;B24B37/00 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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