| 发明名称 |
Soi wafer and method for producing soi wafer |
| 摘要 |
<p>There are provided an SOI wafer wherein surface roughness of an SOI layer surface of the SOI wafer is 0.12 nm or less in terms of RMS value and/or interface roughness of an interface between the SOI layer and a buried oxide layer of the SOI wafer is 0.12 nm or less in terms of RMS value, and a method for producing such an SOI wafer.</p> |
| 申请公布号 |
EP2413352(A2) |
申请公布日期 |
2012.02.01 |
| 申请号 |
EP20110008509 |
申请日期 |
2000.03.31 |
| 申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
FURIHATA, JIN-ICHIRO;MITANI, KIYOSHI;KOBAYASHI, NORIHIRO;AKIYAMA, SHOJI |
| 分类号 |
H01L21/26;H01L21/762;H01L21/02;H01L21/30;H01L27/12 |
主分类号 |
H01L21/26 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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