A Method for Eliminating a Dislocation in Growing Single Si Crystal

摘要

PURPOSE: A method for manufacturing dislocation-free single crystal silicon is provided to grow the dislocation-free single crystal silicon to a large capacity and diameter without a necking by suppressing dislocation due to improper seed location. CONSTITUTION: Single crystal silicon is made by immersing a seed crystal in a crucible with silicon solution and pulling out the seed crystal. The dislocation-free single crystal silicon is separated from the silicon solution without necking. The crucible rotates at 5 to 20 rpm.