| 摘要 |
The present invention is directed to a pattern forming method, comprising: forming a resist film by applying, to a substrate, a resin composition containing a resin of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer containing an organic solvent decreases under an action of an acid, wherein the resin composition is capable of forming a resist film of which solubility in the positive developer increases and solubility in the negative developer decreases upon irradiation with actinic rays or radiation;
exposing the resist film with EUV light; and
developing the resist film after the exposing with the negative developer containing an organic solvent. |
