MOSFET AND METHOD FOR MANUFACTURING MOSFET

摘要

A MOSFET 1 includes a silicon carbide (SiC) substrate (2) having a main surface having an off angle of not less than 50° and not more than 65° relative to a {0001} plane; a semiconductor layer (21) formed on the main surface of the SiC substrate (2); and an insulating film (26) formed in contact with a surface of the semiconductor layer (21). When the insulating film (26) has a thickness of not less than 30 nm and not more than 46 nm, the threshold voltage thereof is not more than 2.3V. When the insulating film (26) has a thickness of more than 46 nm and not more than 100 nm, the threshold voltage thereof is more than 2.3 V and not more than 4.9 V.