发明名称
摘要 PROBLEM TO BE SOLVED: To improve the heat dissipation property and reduce a waveguide loss by diffraction on outer surfaces in a semiconductor laser consisting of a two-dimensional photonic crystal line-defect waveguide. SOLUTION: The semiconductor laser consisting of a semiconductor clad two-dimensional photonic crystal-line defect waveguide is so constructed as to meet 0.5a>r≥0.325a, d≤1.84a, and a=λ/n<SB>eff</SB>; whereλis the wavelength in vacuum of light created by lasing in a waveguide 3, a is a distance among a plurality of holes 2, r is the radius of the holes 2, d is the width of the waveguide 3 which is defined as a distance between the centers of the holes 2 arranged with the waveguide 3 in-between; and n<SB>eff</SB>is an effective refraction index of the waveguide 2 in a basic mode at the Bloch wave number of 0 which is determined by the refraction index of a semiconductor core layer 12, the distance a among the plurality of holes 2, the radius r of the holes 2, and the width d of the waveguide 3. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP4868437(B2) 申请公布日期 2012.02.01
申请号 JP20050319621 申请日期 2005.11.02
申请人 发明人
分类号 H01S5/20;G02B6/12;H01S5/026 主分类号 H01S5/20
代理机构 代理人
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