METHOD FOR DIVIDING OF MONOCRYSTALLINE LAYERS, DISKS OR WAFERS

摘要

The method involves pre-adjusting a crystallographic cleavage plane (2') with respect to a cleaving device, and predetermining stress intensity via stress fields (3', 4'). An energy release rate for the predetermined stress fields is determined during a crack growth in dependence of a possible angle of deflection (alpha) from the cleavage plane. The stress fields are generated, and the stress fields are controlled or regulated and/or pre-adjusted such that crack propagation takes place in a monocrystal e.g. gallium arsenide monocrystal.