| 摘要 |
<p>PURPOSE: A transistor of a semiconductor device and a manufacturing method thereof are provided to reduce GIDL(Gate Induced Drain Leakage) by forming a first area which is separated from a gate electrode. CONSTITUTION: A gate oxide layer and a gate electrode are formed on a semiconductor substrate. A buffer layer covers the semiconductor substrate with the gate oxide layer and the gate electrode. A first area(142) is formed by implanting a first ion to the semiconductor substrate with the buffer layer. The first area is separated from the side of the gate electrode. A second area(144) is formed between the first area and the side of the gate electrode by implanting a second ion to the substrate with the first area.</p> |
