发明名称 METHOD OF FORMING A PROTECTIVE LAYER ON THIN-FILM PHOTOVOLTAIC ARTICLES AND ARTICLES MADE WITH SUCH A LAYER
摘要 Chalcogenide based photovoltaic devices cells with good resistance to environmental elements can be formed by direct low temperature deposition of inorganic barrier layers onto the film. A unique multilayer barrier can be formed in a single step when reactive sputtering of the silicon nitride onto an inorganic oxide top layer of the PV device.
申请公布号 EP2412031(A2) 申请公布日期 2012.02.01
申请号 EP20100711506 申请日期 2010.03.23
申请人 DOW GLOBAL TECHNOLOGIES LLC 发明人 DEGROOT, MARTY, W.;FEIST, REBEKAH, K.;BERNIUS, MARK, T.;BANHOLZER, WILLIAM, F.;YEUNG, CHUNG-HEI;SREERAM, ATTIGANAL, N.;HALEY, ROBERT, P., JR.
分类号 H01L31/0216;H01L31/032 主分类号 H01L31/0216
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