| 摘要 |
The present application provides semiconductor materials made from Group II, Group III and Group V elements of the periodic table, with formula II-Ill-V. Examples are provided of the manufacture of ZnGaN, ZnInN, ZnInGaN, ZnAIN, ZnAIGaN, ZnAIInN,, ZnAIGaInN or MgInN. These can also be made in nanoparticle or thin film form. The composition of the II-III-V compound semiconductor material can be controlled in order to tailor their band-gap and light emission properties. For example figure 4 (shown) gives the measured photoluminescence emission spectroscopic output for ZnInN semiconductor, in which the reacton time is controlled. The effect of the reaction time is to lower the peak wavelength of photoluminescence intensity. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated, with reported photoluminescence quantum yields in the range 10% to 55%. A method is also included whereby the semiconductor are produced by reacting at least a source of a group II element, at least a source of a source of a group III element and at least a source of nitrogen. For example ZnInN is formed by heating at 250deg C Indium iodide, sodium amide, hexadecane thiol, zinc stearate and diphenyl ether for up to an hour. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays. |
