<p>A MOSFET 1 includes: a silicon carbide (SiC) substrate (2) having a main surface having an off angle of not less than 50° and not more than 65° relative to a {0001} plane; a semiconductor layer (21) formed on the main surface of the SiC substrate (2); and an insulating film (26) formed in contact with a surface of the semiconductor layer (21). The MOSFET 1 has a sub-threshold slope of not more than 0.4 V/Decade.</p>
