| 发明名称 |
Bipolar device having improved capacitance |
| 摘要 |
The invention, in one aspect, provides a semiconductor device that comprises a collector located in a semiconductor substrate and an isolation region located under the collector, wherein a peak dopant concentration of the isolation region is separated from a peak dopant concentration of the collector that ranges from about 0.9 microns to about 2.0 microns. |
| 申请公布号 |
US8106480(B2) |
申请公布日期 |
2012.01.31 |
| 申请号 |
US20100652560 |
申请日期 |
2010.01.05 |
| 申请人 |
CHEN ALAN S.;DYSON MARK;KERR DANIEL C.;ROSSI NACE M.;AGERE SYSTEMS INC. |
发明人 |
CHEN ALAN S.;DYSON MARK;KERR DANIEL C.;ROSSI NACE M. |
| 分类号 |
H01L29/73;H01L21/70;H01L21/761;H01L29/732 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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