| 摘要 |
A memory is provided that is improved in cost, life, energy consumption and recording density over existing optical disks and hard disks and operates under novel principles, as well as its manufacturing method. A nonvolatile phase change magnetic memory comprises a substrate and a film loaded on the substrate, which film is of a crystalline transition metal chalcogenide compound that in composition is deficient in transition metal from its stoichiometric ratio composition and expressed by formula: AyX where A is a transition metal, X is a chalcogen element and 0<y<1, and in which film a minute portion subjected to a temperature history is made to form a ferromagnetic phase (1) or an antiferromagnetic phase (7) in which holes (4) for transition metal (2) are orderly or disorderly arranged and is stored with information as a magnetization based on the ferromagnetic phase (1) or antiferromagnetic phase (7). |
