| 摘要 |
A heat treatment jig for semiconductor silicon substrates is configured such that a cristobalitized oxide film is formed in a region where the cristobalitized oxide film is in contact with a silicon substrate backside. When said heat treatment jig is used, generation of a slip can be prevented during heat treatment. In the case where the heat treatment jig is used in combination with a shielding plate, particles are further prevented from adhering to the silicon substrate surface to maintain quality characteristics of the semiconductor silicon substrate at a higher level, and device production yield can largely be improved. The heat treatment jig can easily be manufactured by introducing a cristobalitization promoting agent to a surface or in the vicinity of a surface of the heat treatment jig, performing the heat treatment at temperatures in the range of 1000 to 1380° C., and repeating the introduction of the cristobalitization promoting agent and the heat treatment. |
