Method for manufacturing the high voltage transistor,申请号KR20040056117-传众专利搜索

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发明名称	Method for manufacturing the high voltage transistor
摘要
申请公布号	KR101110178(B1)	申请公布日期	2012.01.31
申请号	KR20040056117	申请日期	2004.07.19
申请人		发明人
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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