| 发明名称 |
Methods for forming a transistor and modulating channel stress |
| 摘要 |
Methods are provided for manufacturing transistors and altering the stress in the channel region of a single transistor. One or more parameters that are effect stress in the channel region are altered for a single transistor to increase or decrease the channel stress in PMOS and NMOS transistors. |
| 申请公布号 |
US8105908(B2) |
申请公布日期 |
2012.01.31 |
| 申请号 |
US20050165282 |
申请日期 |
2005.06.23 |
| 申请人 |
THIRUPAPULIYUR SUNDERRAJ;NOURI FARAN;WASHINGTON LORI;APPLIED MATERIALS, INC. |
发明人 |
THIRUPAPULIYUR SUNDERRAJ;NOURI FARAN;WASHINGTON LORI |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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