发明名称 Process condition measuring device
摘要 An instrument for measuring a parameter comprises a substrate, a plurality of sensors carried by and distributed across a surface of the substrate that individually measure the parameter at different positions, an electronic processing component carried by the substrate surface, electrical conductors extending across the surface connected to the sensors and the electronic processing component, and a cover disposed over the sensors, electronic processing component and conductors. The cover and substrate have similar material properties to a production substrate processed by a substrate processing cell. The instrument has approximately the same thickness and/or flatness as the production substrate. The instrument may be subjected a substrate process and one or more parameters may be measured with the instrument during the process. The behavior of a production wafer in the substrate process may be characterized based on measurements of the parameters made with the one or more sensors.
申请公布号 US8104342(B2) 申请公布日期 2012.01.31
申请号 US20080034041 申请日期 2008.02.20
申请人 SUN MEI H.;WILTSE MARK;RENKEN WAYNE G.;REID ZACHARY;DIBIASE TONY;KLA-TENCOR CORPORATION 发明人 SUN MEI H.;WILTSE MARK;RENKEN WAYNE G.;REID ZACHARY;DIBIASE TONY
分类号 G01D11/24 主分类号 G01D11/24
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